Ostendo Technologies, Inc. and Technologies and Devices International, part of the Oxford Instruments Group, have recently announced that LED structures grown on their semi-polar GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED structures. Ostendo & TDI had entered into an Information Exchange Agreement with Palo Alto Research Center (PARC) in 2008, pursuant to which they agreed to make semi-polar GaN wafers available for PARC to grow LED and Laser Diode structures on the supplied wafers, and independently validate and report the achieved results. As part of their validation, PARC has grown MQW LED structure on our semi-polar GaN side-by-side with a reference c-plane LED structure in the same MOCVD run. Some of the key results verify the following: The LED structure grown on their semi-polar GaN achieved more than 2.5x more emission intensity than the reference LED structure grown on c-plane GaN. The new semi-polar GaN allowed for higher indium (In) incorporation resulting in longer peak wavelength of ~25 nm for the structure grown. “This is an excellent validation of our work in the semi-polar GaN area for the last two and a half years as it verified the main advantage of our semi-polar GaN and should help encourage LED makers to start considering it for future LED brightness improvements,” said Dr. Hussein S. El Ghoroury, CEO of Ostendo. Earlier in 2010 Ostendo and TDI announced the availability of semi-polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapor Phase Epitaxy (HVPE) technology. This joint development now provides the opportunity to leading High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency significantly compared with structures grown on c-plane GaN substrates.
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