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Gallium-nitride (GaN) FETs are increasingly finding use as high power devices for power electronics systems. They can realize ultra-high power-density operation with low power loss due to high carrier mobility in the two dimensional electron gas (2DEG) channel. GaN FETs are a majority carrier device, therefore, the absence of reverse recovery charge creates a good match for high-voltage operation.   To learn more about how a GaN FET power stage can outperform Silicon MOSFETs, read the att ...