Gallium-nitride (GaN) FETs are increasingly finding use as high power devices for power electronics systems. They can realize ultra-high power-density operation with low power loss due to high carrier mobility in the two dimensional electron gas (2DEG) channel. GaN FETs are a majority carrier device, therefore, the absence of reverse recovery charge creates a good match for high-voltage operation.


To learn more about how a GaN FET power stage can outperform Silicon MOSFETs, read the attached pdf or attend the GaN technology webinar here: Do More with a GaN Power Stage