Version 1
Created by pchan element14 Team on Nov 24, 2020 3:13 PM. Last modified by pchan element14 Team on Dec 8, 2020 11:36 AM.

     

    Semiconductors I: GaNFETs for Power Conversion

    Sponsored by

     

    The element14 Essentials of GaN FETs for Power Conversion covers the requirements of electronics in power conversion applications, the limitations of current solutions, and the potential for GaNFETs (Galium-Nitride Field Effect Transistors). To extend the knowledge covered in the main module, this supplementary guide discusses the types of related components used for prototyping or product development.

    Go to Learning Module

     

    Components

     

    GAN063-650WSAQ Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

    Buy NowBuy Now

    The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia's state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies—offering superior reliability and performance. AEC-Q101 qualified.

    Ultra-low reverse recovery charge

    Simple gate drive (0 V to +10 V or 12 V)

    Robust gate oxide (±20 V capability)

    Ultra-low reverse recovery chargeHigh gate threshold voltage (+4 V) for very good gate bounce immunity

    Very low source-drain voltage in reverse conduction mode

    Transient over-voltage capability (800 V)

    AEC-Q101 qualified

     

    GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

    Buy Now

    The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

    Simplified driver design, as standard level MOSFET gate drivers can be used:

    0 V to 12 V drive voltage

    Gate threshold voltage VGSth of 4 V

    Robust gate oxide with &plsumn;20 V VGS rating

    High gate threshold voltage of 4 V for gate bounce immunity

    Low body diode Vf for reduced losses and simplified dead-time adjustments

    Transient over-voltage capability for increased robustness

    CCPAK package technology:

    Improved reliability, with reduced Rth(j-mb) for optimal cooling

    Lower inductances for lower switching losses and EMI

    175°C maximum junction temperature

    High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    Easy solder wetting for good mechanical solder joints

     

    GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 Package

    Buy Now

    The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance. This product has been fully designed and qualified to meet AEC-Q101 requirements.

    Fully automotive qualified to AEC-Q101:

    175°C rating suitable for thermally demanding environments

    Simplified driver design, as standard level MOSFET gate drivers can be used:

    0 V to 12 V drive voltage

    Gate threshold voltage VGSth of 4 V

    Robust gate oxide with &plsumn;20 V VGS rating

    High gate threshold voltage of 4 V for gate bounce immunity

    Low body diode Vf for reduced losses and simplified dead-time adjustments

    Transient over-voltage capability for increased robustness

    CCPAK package technology:

    Improved reliability, with reduced Rth(j-mb) for optimal cooling

    Lower inductances for lower switching losses and EMI

    175°C maximum junction temperature

    High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    Easy solder wetting for good mechanical solder joints

     

    GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

    Buy Now

    The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

    Ultra-low reverse recovery charge

    Simple gate drive (0 V to +10 V or 12 V)

    Robust gate oxide (±20 V capability)

    High gate threshold voltage (+4 V) for very good gate bounce immunity

    Very low source-drain voltage in reverse conduction mode

    Transient over-voltage capability

     

    GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 Package

    Buy Now

    The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

    Simplified driver design, as standard level MOSFET gate drivers can be used:

    0 V to 12 V drive voltage

    Gate threshold voltage VGSth of 4 V

    Robust gate oxide with ±20 V VGS rating

    High gate threshold voltage of 4 V for gate bounce immunity

    Low body diode Vf for reduced losses and simplified dead-time adjustments

    Transient over-voltage capability for increased robustness

    CCPAK package technology:

    Improved reliability, with reduced Rth(j-mb) for optimal cooling

    Lower inductances for lower switching losses and EMI

    175°C maximum junction temperature

    High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    Easy solder wetting for good mechanical solder joints

     

    *Trademark. Nexperia is a trademark of Nexperia Inc. Other logos, product and/or company names may be trademarks of their respective owners.