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    Semiconductors I: GaNFETs for Power Conversion

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    The element14 Essentials of GaN FETs for Power Conversion covers the requirements of electronics in power conversion applications, the limitations of current solutions, and the potential for GaNFETs (Galium-Nitride Field Effect Transistors). To extend the knowledge covered in the main module, this supplementary guide discusses the types of related components used for prototyping or product development.

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    Components

     

    GAN063-650WSAQ Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

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    The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia's state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies—offering superior reliability and performance. AEC-Q101 qualified.

    Ultra-low reverse recovery charge

    Simple gate drive (0 V to +10 V or 12 V)

    Robust gate oxide (±20 V capability)

    Ultra-low reverse recovery chargeHigh gate threshold voltage (+4 V) for very good gate bounce immunity

    Very low source-drain voltage in reverse conduction mode

    Transient over-voltage capability (800 V)

    AEC-Q101 qualified

     

    GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

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    The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

    Simplified driver design, as standard level MOSFET gate drivers can be used:

    0 V to 12 V drive voltage

    Gate threshold voltage VGSth of 4 V

    Robust gate oxide with &plsumn;20 V VGS rating

    High gate threshold voltage of 4 V for gate bounce immunity

    Low body diode Vf for reduced losses and simplified dead-time adjustments

    Transient over-voltage capability for increased robustness

    CCPAK package technology:

    Improved reliability, with reduced Rth(j-mb) for optimal cooling

    Lower inductances for lower switching losses and EMI

    175°C maximum junction temperature

    High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    Easy solder wetting for good mechanical solder joints

     

    GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 Package

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    The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance. This product has been fully designed and qualified to meet AEC-Q101 requirements.

    Fully automotive qualified to AEC-Q101:

    175°C rating suitable for thermally demanding environments

    Simplified driver design, as standard level MOSFET gate drivers can be used:

    0 V to 12 V drive voltage

    Gate threshold voltage VGSth of 4 V

    Robust gate oxide with &plsumn;20 V VGS rating

    High gate threshold voltage of 4 V for gate bounce immunity

    Low body diode Vf for reduced losses and simplified dead-time adjustments

    Transient over-voltage capability for increased robustness

    CCPAK package technology:

    Improved reliability, with reduced Rth(j-mb) for optimal cooling

    Lower inductances for lower switching losses and EMI

    175°C maximum junction temperature

    High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    Easy solder wetting for good mechanical solder joints

     

    GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

    Buy Now

    The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

    Ultra-low reverse recovery charge

    Simple gate drive (0 V to +10 V or 12 V)

    Robust gate oxide (±20 V capability)

    High gate threshold voltage (+4 V) for very good gate bounce immunity

    Very low source-drain voltage in reverse conduction mode

    Transient over-voltage capability

     

    GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 Package

    Buy Now

    The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia's latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies—offering superior reliability and performance.

    Simplified driver design, as standard level MOSFET gate drivers can be used:

    0 V to 12 V drive voltage

    Gate threshold voltage VGSth of 4 V

    Robust gate oxide with ±20 V VGS rating

    High gate threshold voltage of 4 V for gate bounce immunity

    Low body diode Vf for reduced losses and simplified dead-time adjustments

    Transient over-voltage capability for increased robustness

    CCPAK package technology:

    Improved reliability, with reduced Rth(j-mb) for optimal cooling

    Lower inductances for lower switching losses and EMI

    175°C maximum junction temperature

    High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    Easy solder wetting for good mechanical solder joints

     

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