Power conversion efficiency is a key growth driver in electronics but there is often a trade-off between density and efficiency.
Compound or III-V semiconductors, such as Gallium Nitride (GaN), often offer performance benefits compared to Silicon (Si). For example GaN is mechanically stable, has a wide bandgap with high heat capacity and comparable thermal conductivity. However, III-V semiconductors tend to be more costly to process. Growing thick GaN epitaxial layers on large diameter Si substrate is a recent breakthrough. It reduces costs per wafer to a competitive level for power applications and allows processing in existing 200 mm fabs.
Efficient power use is a key industrial challenge and a driver for innovation. For some applications power conversion efficiency and power density are critical for market adoption. Prime examples include the trend towards automotive electrification and the high-voltage communications and industrial infrastructure sectors. GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost. In this session, we will discuss how Nexperia GaN FETs enable high efficiency and robust designs while increasing power density and reducing system complexity.
What You Will Learn by Attending:
- Features of Nexperia cascode technology
- Benefits in hard and soft switching topologies
- Case study: 4kW Totem Pole PFC
- Nexperia GaN products and upcoming innovations
Powering the IoT infrastructure
Providing us with the always on cloud connectivity, processing power and storage we demand takes a lot of power. Very efficient high-end power supplies , such as 80 PLUS Titanium rated PSUs, are needed to deliver the reduced power losses in industrial automation, data centres, and telecommunications infrastructure. That is why the improved density and efficient power conversion offered by GaN-on- Si is critical.
Electrification of the powertrain
With every gram of CO₂ exhaust being vital in today’s cars, it is driving the move to vehicle electrification. From hybrids through to full electric vehicles, electrification of the powertrain is expected to dominate power semiconductor market growth in the next two decades. The power density and efficiency of GaN-on-Si will play a leading role in this space, specifically for on-board-chargers (EV charging), DC/DC converters and motor drive traction inverters (xEV traction inverters).
Partnering with Ricardo to develop GaN-based EV inverter design
GaN FET technology leads to systems with greater efficiencies at lower costs. With improved thermal performance and simpler switching topologies, leading to greater range for electric vehicles. GaN is now on the brink of replacing silicon based IGBTs and SiC as the preferred technology for the traction inverters used in plug-in hybrids or full battery electric cars.
Nexperia’s current GAN FET products and development roadmap are focussed on delivering reliable products to support both automotive and IoT infrastructure applications. Our GaN process technology is based on our robust and proven production processes which now generates industry leading power GaN FETs.
When and Where
Start Time:Sep 16, 2020 8:00 AM CDT (America/Chicago)
End Time:Sep 16, 2020 9:00 AM CDT (America/Chicago)
Event Visibility & Attendance Policy:Open
- tariq.ahmad (Owner)