GaN transistors have significant advantages over silicon MOSFET in terms of switching speed and power conversion efficiency. GaN is a high electron mobility transistor (HEMT). The high electron mobility means that a GaN transistor will have a smaller size for a given on-resistance and breakdown voltage than a silicon transistor. These transistors can operate at higher temperatures and higher current densities than their Si counterparts. Such properties make GaN transistors befitting for high power, high frequency and wide bandwidth applications in extreme environments as listed in the application section.
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